LEAKAGE FACTOR AND BURST NOISE IN TRANSISTOR ARRAYS.KNOTT KF.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 18; PP. 523-524; BIBL. 1 REF.Article

PROPOSED PROCESS MODIFICATIONS FOR DYNAMIC BIPOLAR MEMORY TO REDUCE EMITTER-BASE LEAKAGE CURRENTANTIPOV I.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 714-719; BIBL. 14 REF.Article

ELECTRON BEAM INDUCED LEAKAGE CURRENTS IN SILICON NITRIDE THIN FILMSGUNKEL C; SCHALCH D; SCHARMANN A et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 1; PP. K131-K134; BIBL. 6 REF.Article

CONTROLE AUTOMATIQUE DU COURANT DE FUITE DES CONDENSATEURS ELECTROLYTIQUESBEL'KIND GL; SHAFRANSKIJ VS.1976; IZMERITEL. TEKH.; S.S.S.R.; DA. 1976; NO 10; PP. 82-83; BIBL. 2 REF.Article

A MODEL OF DC LEAKAGE IN CERAMIC CAPACITORSLOH E.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6229-6235; BIBL. 16 REF.Article

COURANTS DE FUITE, A TRAVERS UN OXYDE DEPOSE SUR LA SURFACE D'UNE PORTE EN SILICIUM POLYCRISTALLINKORNYUSHKIN NA; KOVCHAVTSEV AP; SAPOZHNIKOVA NV et al.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 3; PP. 210-216; BIBL. 9 REF.Article

BETRACHTUNGEN ZU RC-ZEITGLIEDERN = REMARQUER SUR LES BASES DE TEMPS RCKAUTSCH R.1978; MESSEN U. PRUEFEN; DEU; DA. 1978; NO 12; PP. 835-837Article

A LOW LEAKAGE-CURRENT CDSE THIN FILM TRANSISTORLUO FC; HOESLY DD; CHEN I et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 461-465; BIBL. 6 REF.Article

USE OF A REVERBERATING ROOM IN MICROWAVE OVER CHOKE DESIGNLENTZ RR.1979; J. MICROWAVE POWER; CAN; DA. 1979; VOL. 14; NO 1; PP. 29-33; BIBL. 4 REF.Article

AMORPHOUS SILICON AS A PASSIVANT FOR CRYSTALLINE SILICONPANKOVE JI; TARNG ML.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 2; PP. 156-157; BIBL. 3 REF.Article

ON THE REDUCTIVE EFFECT OF THE ELECTROMETER USING PO COLLECTOR.ARIMOTO M.1977; RES. REP. NAGAOKA TECH. COLL.; JAP.; DA. 1977; VOL. 13; NO 3; PP. 139-144; BIBL. 9 REF.Article

EIN RECHNERGESTEUERTES TESTSYSTEM ZUR LECKSTROMMESSUNG AN HALBLEITERSCHALTKREISEN. = APPAREILLAGE DE CONTROLE COMMANDE PAR ORDINATEUR POUR LA MESURE DES COURANTS DE FUITE SUR DES CIRCUITS A SEMICONDUCTEURKUSTERER V.1977; MESSEN U. PRUEFEN; DTSCH.; DA. 1977; NO 11; PP. 722-726Article

VERWENDUNG VON FI-SCHUTZSCHALTERN. = L'EMPLOI DES DISJONCTEURS DE PROTECTION A COURANT DE FUITESANDELL P.1977; ELEKTROTECH. Z., B; DTSCH.; DA. 1977; VOL. 29; NO 1; PP. 6-8Article

INFLUENCE DE L'EVOLUTION THERMIQUE OU STRUCTURALE DE L'OXYDE ANODIQUE DE TANTALE SUR LES CAUSES DU CLAQUAGE ET DES COURANTS DE FUITE DANS LES CONDENSATEURS FRITTES A ELECTROLYTE SOLIDE.TISSOT JP; FRADE G.1974; DGRST-727520; FR.; DA. 1974; PP. 1-10; BIBL. 8 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

ION IMPLANTED GAAS BIPOLAR TRANSISTORSYUAN HT; DOERBECK FH; MCLEVIGE WV et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 16; PP. 637-638; BIBL. 7 REF.Article

NEBELVERFAHREN ALS NEUE PRUEFMETHODE = DUST AND FOG TRACKING TESTFINGER H; HOLL W; KAMPE WF et al.1980; ETZ, ELEKTROTECH. Z. (BERL.); DEU; DA. 1980-11; VOL. 101; NO 23; PP. 1268-1272; BIBL. 4 REF.Article

ASSESSING INHERENT LEAKAGES ON EARTH LEAKAGE PROTECTED CIRCUITSEALES LC.1980; ELECTR. REV.; GBR; DA. 1980; VOL. 207; NO 4; PP. 32-33Article

ETUDE EXPERIMENTALE D'UNE POMPE MHD, A CONDUCTION COMPENSEE, A DEUX CANAUX EN PRESENCE DE FUITES DE COURANT.KOVNER DS; SHMELEV AN.1978; MAGNIT. GIDRODINAM., LATV. S.S.R.; SUN; DA. 1978; PP. 123-126; BIBL. 3 REF.Article

CALCUL DE LA TENSION ET DU COURANT DU SYSTEME "RAIL-STRUCTURE SOUTERRAINE ETENDUE" LORS DE LEUR BRANCHEMENT PARALLELESUMIN AR.1977; ELEKTRICHESTVO; S.S.S.R.; DA. 1977; NO 3; PP. 83-86; BIBL. 6 REF.Article

QUASI-THREE-DIMENSIONAL ANALYSIS OF A COMBUSTION MHD GENERATORSATYAMURTHY P; VENKATRAMANI N; ROHATGI VK et al.1982; ENERGY CONVERSION AND MANAGEMENT; ISSN 0196-8904; GBR; DA. 1982; VOL. 22; NO 3; PP. 243-250; BIBL. 13 REF.Article

DES BATTERIES AU PLOMB EXEMPTES D'ENTRETIEN DE 1 A 1350 A.P.1980; COMPOSANTS MEC. ELECTR. ELECTRON.; FRA; DA. 1980; NO 114; PP. 51-55; (4 P.)Article

PRECISION CAPACITOR RATIO MEASUREMENT TECHNIQUE FOR INTEGRATED CIRCUIT CAPACITOR ARRAYSMCCREARY JL; SEALER DA.1979; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; USA; DA. 1979; VOL. 28; NO 1; PP. 11-17; BIBL. 5 REF.Article

SOME LEAKAGE CURRENT OBSERVATIONS ON ANODIC NATIVE OXIDES ON GAASMATHUR PC; DAWAR AL; TANEJA OP et al.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 6; PP. 599-602; BIBL. 8 REF.Article

DETERMINATION OF SURFACE- AND BULK-GENERATION CURRENTS IN LOW-LEAKAGE SILICON MOS STRUCTURESBROTHERTON SD; GILL A.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 890-892; BIBL. 12 REF.Article

A SOLUTION TO THE SPACECRAFT CHARGING PROBLEMFELLAS CN.1982; J. ELECTROST.; ISSN 0304-3886; NLD; DA. 1982; VOL. 11; NO 3; PP. 281-296; BIBL. 6 REF.Article